IXFK27N80Q دیتاشیت

IXFK27N80Q

مشخصات دیتاشیت

نام دیتاشیت IXFK27N80Q
حجم فایل 82.837 کیلوبایت
نوع فایل pdf
تعداد صفحات 3

دانلود دیتاشیت IXFK27N80Q

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سایر مستندات

IXFK(27,25)N80, IXFN(27,25)N80 5 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFK27N80Q
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 500W
  • Total Gate Charge (Qg@Vgs): 170nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 7600pF@25V
  • Continuous Drain Current (Id): 27A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@4mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 320mΩ@10V,13.5A
  • Package: TO-264-3
  • Manufacturer: IXYS
  • Series: HiPerFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9740pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
  • detail: N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

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